ABSTRACT
Deep level transient spectroscopy measurements from 20 to 800 K were made on n-and p-type sublimation grown bulk SiC and vapor phase epitaxial grown SiC. Several new deep level centers were observed on both the n-type bulk and epitaxial material with ionization energies in the range of 0.58 to 1.4 eV below the conduction band, and on the p-type materials with energies 0.38 to 1.1 eV above the valence band. Field dependency and capture transient measurements on an Ec-0.63 eV center in the bulk n-type material revealed an anomalous emission process, which is dependent upon the depletion region field strength, and the presence of a thermally activated capture cross section. Secondary ion mass spectrometery measurements of the bulk material revealed the presence of several transition metals and other impurities.
