ABSTRACT
An anomalous shape of the photoconductive decay (PCD) curve due to the rate of electron captured by traps at 77K is observed for the first time from the carbon doped GaAs. It can be explained by the apparent two different values for the carrier life time in the samples. PCD curves have been calculated also theoretically with the values for the various pulse widths of applied light which determines the initial condition of electron capture rate of trap levels. With the experimental parameters extracted from deep level transient spectroscopy(DLTS), the capture coefficients of the trap levels have been obtained by fitting the calculated PCD curves to the corresponding experimental curves obtained by the various pulse widths of the applied light.
