ABSTRACT
The effective species for nitrogen doping have been investigated in N-doped ZnSe grown by using a magnetron-type RF plasma cell. As removing N2+* during growth from nitrogen plasma which contains mainly N2* and N2+* as active species, carrier concentration and PL emission intensity were decreased and PL spectra showed dominant FA emission rather than DdA emission. These results should be caused by reduction of nitrogen incorporation. Taking into consideration the result on ZnSe layers grown in nitrogen-based mixed plasma, higher excited nitrogen species N2+* or atomic nitrogen is more effective for doping.
