Electrical, Photoluminescence and Reflected Second Harmonic Generation Characterisation of Ge- and B-implanted CuGaSe2 Single Crystals

CuGaSe₂ single crystals were doped with Ge and B by ionimplantation. Most of the defects induced by the implantation were healed by an appropriate annealing step, which was revealed by measurements of reflected second harmonic generation and photoluminescence. Hall effect data showed the incorporation of donor levels due to the implantation. Nevertheless no n-type conductivity could be obtained due to self-compensation for doses higher than 10^l5cm⁻².