ABSTRACT
The investigation of temperaruto dependencies of spectral bands and external quantum yield of edge photoluminescence (PL) of C,uGaSe2 single crystals obtained by chemical transport method have been carried out. The activation energies of acceptor levels have been determined. It was shown, that at temperatures below the Debye one the temperature dependence of PL intensity is determined by a 35 meV acceptor level and at higher temperatures - by a 150 meV acceptor level. PL edge spectra at 300 K and 80 K temperatures are determined mainly by conduction band-valence band optical transitions.
