ABSTRACT
P-type CIS single crystals were implanted at room temperature with ions of inert gases: Xe+, Ar+ and He+. In each case photoluminescence (PL) spectra revealed a similar broad single emission band associated with donor-acceptor pair (DAP) transition. Irradiation suppressed the PL intensity. For Xe+ and Ar+ the increase in dose was followed by a decrease in DAP intensity. For the Xe+ implanted sample, the DAP peak disappeared after a dose of 1014cm−2 whereas for He+ the DAP peak could be observed after 1017cm−2. After He+ implantation with 1016cm−2 a new emission peak at 1.25µm was observed. It is suggested that radiation defects in the near surface layer create a high concentration of deep and shallow levels which may act like non-radiative recombination centres. Electrons and holes recombine on such centres decreasing the intensity of photoluminescence.
