Photoluminescence of CuGaSe2 and CuAlSe2 MOVPE Layers Grown on CuGa0.96In0.04Se2 Substrate

Photoluminescence (PL) study has been performed on the epitaxial layers of CuGaSe₂ and CuAlSe₂ grown by metalorganic vapor phase epitaxy (MOVPE) on CuGa_0.96In_0.04Se₂ substrates prepared by the traveling heater method (THM). PL properties of the epilayers are compared with each other for those grown on GaAs(100), CuGa_0.96In_0.04Se₂ (100), CuGa_0.96In_0.04Se₂ (112) and randomly oriented CuGa_0.96In_0.04Se₂ substrates. PL results are discussed in terms of the lattice mismatches and stresses in the epilayers.