ABSTRACT
Photoluminescence properties of CuGaSe2 films grown by molecular beam epitaxy were studied. According to the annealing results, the emission peaks at 1.671, 1.640 and 1.610 eV found in a Cu-rich film are due to the VSe → VGa, Cui → CuGa, and Cui → VGa transition, respectively. For the film with a near-stoichiometric composition, the emission peaks at 1.653, 1.623, and 1.581 eV are caused by the VSe → VCu, VSe → CuGa, and Gacu → VCu transition, respectively.
