ABSTRACT
The properties of undoped and doped CuGaSe2 single crystals have been examined by means of Hall effect, Seebeck effect, and photoluminescence measurements. The activation energy of the electrically dominant acceptor level (Vcu) was determined as function of acceptor concentration. The activation energy of this level in the infinite dilution limit was found to be approximately 59 meV. Many other defect and impurity levels were determined from photoluminescence spectra of the different samples. They were correlated to intrinsic and extrinsic point defects taking into account the formation energy of the defects and the stoichiometry of the samples. Furthermore the effective hole mass was estimated to be 0.84mo from Hall and Seebeck effect measurements.
