ABSTRACT
We report a theoretical study of the lattice dynamics of GaInP2, an ordered compound semiconductor which crystallises in the CuPt-like structure. We use a rigid ion model tacking into account short range interactions between first and second nearest neighbours and long range Coulomb interactions. The parameters of the model have been obtained using initially the force constant of the constituents, GaP and InP. A further improvement has been obtained performing a least-mean-square fit to the experimental Raman data. The theory satisfactorily accounts for the experimental results.
