ABSTRACT
In this work we report studies on electrical and galvanomagnetic properties of as-grown and annealed samples of p-Cu2SnSe3 and p-Cu2SnTe3 between 77 and 300 K. For Cu2SnSe3, the resistivity shows a change from activated to metallic behaviour at T = 150 K and an activation energy of 5 meV was determined. The presence of a maximum in the Hall coefficient is indicative of an impurity conduction band. A theoretical analysis of the mobility shows that the mobility is dominated by acoustic deformation potential scattering processes and impurity scattering. The magnetic field and temperature dependencies of the magnetoresistance are reported. In the case of Cu2SnTe3 the resistivity presents a metallic behaviour. An improvement in the semiconductors properties is observed in the annealed samples.
