Optical properties in zinc-blende MnTeSb films

Thin films of MnTe_1-xSb_x. with ZnTe buffer layer of ~ 500 Å are grown on sapphire substrate by molecular beam epitaxy method (MBE). The crystal structures are zinc-blende type for 2=0.24 and NiAs type for x ≥0.29. Photoluminescence (PL) and PL excitation (PLE) spectra of MnTe_1-xSb_x. are investigated, and discuss Sb-doping effects comparing to the results of MnTe. There is no PL around 2.0 eV in MnTe_1-xSb_x of NiAs structure. In zinc-blende MnTe_1-xSb_x, PL peak is observed at ~ 2.0 eV assigned as intra d-d (⁴T₁ to⁶A₁) transitions (MnPL). The temperature dependence of this PL is different from MnPL in zinc-blende Cd_1-xMn_xTe and the origin of this difference is discussed.