ABSTRACT
Polycrystalline Cu(In,Ga)Se2 thin films have been investigated near their fundamental absorption edge at room temperature using a high-resolution photoacoustic spectrometer of the gas-microphone type. Films were grown onto glass substrates at 50–450 °C. We present preliminary results relating to the influence of substrate temperature on the photoacoustic spectra of as-grown Cu(In,Ga)Se2 thin films. The improvements in the photoacoustic response are directly correlated with the sample structural properties. The effect of interference on the photoacoustic spectra is discussed.
