ABSTRACT
Thin films of Indium tin oxide were prepared by a reactive evaporation technique on glass and quartz substrates, held at temperatures in the range 373–573 K at various partial pressures of oxygen in the range 8x10−5 - 9x10−4 mbar. The influence of oxygen pressure and substrate temperature on electrical and optical properties were investigated. The films with low resistivity (4x10−3 ohm-cm) and high transmission (92%) in the visible range were generated at substrate temperature of 573 K and an oxygen pressure of 4x10−4 mbar.
