ABSTRACT
By light pulse technique method, charged carrier dynamical behavior of AgGaSe2 thin film which were fabricated by thermal evaporation method was investigated. The mobility, carrier concentration, and current density were calculated by the physical model and theoiy of Batra et al. We evaluated the mobility 6 × 10−3/V · s and the carrier concentration ~1024/cm3 of AgGaSe2 thin film, and the majority carrier was a kind of hole type.
