ABSTRACT
CdInGaS4, CdInGaS4: Er3+ and CdInGa0.96Er0.04S4 single crystals were grown using the CTR technique. The grown single crystals have a rhombohedral crystal structure. These compounds have both a direct and an indirect energy gap. Sharp PL peaks of the CdInGaS4: Er3+ and CdInGa0.96Er0.04S4 single crystals were observed at 11 K. These PL peaks were attributed to the radiational recombinations between the split electron energy levels of the Er3+ ions occupied at C3v, symmetry of the CdInGaS4 single crystal host lattice.
