ABSTRACT
We report on the study of Cu(Ga,In)(Se,S)2-based p-n junction devices, layered structures and precipitations in crystals by spectroscopical confocal laser scanning microscopy with tunable excitation energy. Using the local resolution of a confocal laser microscope, we obtain Raman scattering and photoluminescence spectra and spectral maps at one sitting on a local scale. The p-n-junction of the device is used to get simultaneously a micro LBIC information. The findings from these analyses (compositional, structural, electronic, topographical etc.) may be correlated with one another, greatly increasing the value of laser microscopy analytical capabilities. Using the micro-focused laser beam as a tool, modifications such as annealing or recrystallisation are possible with a comprehensive in situ characterisation of the process by Raman spectroscopy. In the light of an in situ Raman/LBIC study of the local recrystallisation process in an N+ implanted CuInSe2 diode we demonstrate, that complex processes such as increase in carrier diffusion length due to structural changes and secondary phase formation can be investigated with a single measurement, utilizing the combination of various techniques.
