ABSTRACT
Etching experiments have been carried out with coevaporated CIGS films in aqueous solutions with various pH and in presence of https://www.w3.org/1998/Math/MathML"> MnO 4 2 − https://s3-euw1-ap-pe-df-pch-content-public-p.s3.eu-west-1.amazonaws.com/9781003063049/ea1329d3-df9d-47ef-98aa-cba26732e61c/content/ieq0223.tif" xmlns:xlink="https://www.w3.org/1999/xlink"/> and H2O2 oxidizing species. Etching rates and surface composition and structure have been characterized and related to the etching conditions. Manganese (VII) etching allows either a continuous or a self saturated etching, controled by the formation of a passivating MnO2 layer. H2O2 in presence of EDTA allows a continuous etching while maintaining the surface composition.
