ABSTRACT
The effect of Cu and In vacancies on the structural parameters of near stoichiometric CuInSe2 samples has been analyzed finding that while both change the Se position and the interatomic distances, In vacancies seem to affect more strongly to these parameters. The presence of this kind of defects has been studied by PL and electrical conductivity as a function of temperature measurements. Band gap energy values have been obtained from reflectance measurements and are compared to those predicted by Jaffe and Zunger equation [Phys. Rev. B 29 1882], The structural contribution term needs to be corrected for small stoichiometric deviations around CuInSe2.
