ABSTRACT
In the present work, a new technique for incorporation of hydrogen into semiconductors was tested for hydrogen related defect passivation. The combination of low energy (<500 eV) and low current density (0.5 to 30 μA/cm2) hydrogen implantation at elevated substrate temperature (100 to 300°C) allows a diffusion of hydrogen into the thin film without observable lattice damage as proved by Raman spectroscopy. The passivation effect of hydrogen has been measured in GaAs and InP by Hall effect measurements. This technique was also successfully applied to CuIn(Se,S)2 without observable lattice damage. For the implantation process we used a Kaufman-type ion source with a beam diameter of 2 cm modified for hydrogen use in two different designs: (A) a conventional two grid multi-aperture ion optic and (B) an ion beam mass separating multi-grid system.
