ABSTRACT

The state diagram of the CuInS2In2S3 system has been investigated. It has been found that at 25 mol% In2S3, the Cu3In5S9, melting congruently at 1085°C, is formed. Cu3In5S9 single crystals have a layered structure and are crystallised in a monoclinic structure with the parameters a=6.6 Å, β=6.91 Å, c=8.12 Å; β=89; z=1. Certain semiconductor parameters of Cu3In5S9 single crystals have been obtained from photoelectric studies.