ABSTRACT
The photoelectromagnetic effect has been measured over a temperature range of 77 to 220 K for compensated hole CdGeAs2 under condition of thick slab and soft excitation. Minority carriers lifetimes were found to vary from 5 10−13 s to 10−9 at this temperature range. The electron cross-section of trap level ranges from 2 10−13 cm2 to 5 10−17 cm2.
