ABSTRACT
Bulk crystals of Cu-Ga-In-S system were grown at ~1070°C by the temperature difference growth method under controlled S vapor pressure using In as a solvent. When S vapor pressures applied on the solution were low (≤10Torr), the grown crystals were Cu(Ga1-x Inx)S2 with low In content (x≤0.03). The alloy composition can be controlled by the S vapor pressure larger than lOOTorr from Cu(Ga,In)S2 to Cu(Ga,Tn)3S5. It is found that a defect chalcopyrite or an OVC (ordered vacancy compound) exists in this crystal system.
