ABSTRACT
This paper report on the effort of the thin film deposition of ZnSCuInS2 alloys of various chemical composition on (111)A, (001) GaAs- and(001) GaP-sub strates, and molybdenum coated glass. The deposition was achieved by means of flash evaporation and pulsed laser deposition. Epitaxial growth was obtained on GaAs- as well as GaP-substrates independent of the substrate orientation, magnitude and sign of lattice misfit. Due to three-dimensional growth more or less isolated islands could be observed after deposition. The defect structure (i.e. dislocations, stacking faults, twins and grain boundaries) was investigated by means of TEM and high resolution TEM using cross-sections. The chemical composition of deposited material was determined by electron microprobe analysis and X-ray diffraction. Solar cells of the type Al-electrode/ZnO/CdS/ZnSCuInS2/Mo/glass where the ZnS-CuInS2 layer acts as the absorbing material revealed an efficiency of 6.3%.
