ABSTRACT
Several non-destructive methods like photoluminescence (PL) spectroscopy at 2 and 300 K, x-ray diffraction (XRD), electron microprobe and the evaluation of reflection curves were used to determine the Al-content of 30–50 µm thick n-AlxGa1-xAs (Sn) crystal layers (0<x<0.5) grown by liquid phase epitaxy (LPE).
