Photovoltaic properties of In2O3/CuInSe2 heterostructures prepared by the method of thermal oxidation

Photoresponse spectra of In₂O₃/CuInSe₂ heterojunctions grown on p-type CuInSe₂ (CIS) single crystals as well as photoconductivity of the virgin crystals and oxide layers were studied. The distinct effect of optical interference by the upper layer has been found over the whole spectral range from 1 to 3 eV. The measurements and modeling have shown the main contribution to photovoltaic spectra are by the interference oxide layer, photosensitive interface layer and embedded p-n junction.