Coordinate-sensitive photoelements with heterostructures based on A3B6 and A1B3C6 2 - type layered compounds

The results of experimental investigation of bipolar coordinate-sensitive photoelements based on n-InSe-p-GaSe and n-InSe-p-TlGaSe₂ heterojunctions are reported. It is shown that under local illumination by the light probe a longitudinal photovoltage the value of which depends linearly on the coordinate in the region between the contacts occurs along the upper GaSe or TlGaSe₂ layers. A high sensitivity is observed under illumination with a quantum energy hv=(1.2–2.0) eV between the band gaps of contacting materials.