ABSTRACT

We report on a detailed investigation on relaxations of the open circuit voltage Voc of ZnO/CdS/Cu(In,Ga)Se2 solar cells. Considering that persistent photoconductivity can be observed on Cu(In,Ga)Se2 polycrystalline absorber layers as well as on Cu(In,Ga)Se2 single crystals, we propose a model that describes the Voc relaxation as a property of the Cu(In,Ga)Se2 bulk material and not as a property of a specific interface of the heterojunction.