ABSTRACT
The results of experimental investigation of ionising radiation effect on photoelectrical properties of ternary semiconductors of T1GaSe2,T1InSe2 type and the photodiodes on their basis are presented. The irradiation by different kinds of ionizing radiation is found not to lead to considerable change of photoelectrical parameters of the above crystals at low doses. With the average radiation doses the photosensitivity of crystal studied increases by 30–60% as compared to the initial values.
