Electron spin resonance of donor electrons in CdIn2S4 single crystals

Single crystals of CdIn₂S₄ show transition from regular to degenerate semiconductors as carrier concentration increases. To investigate these characteristics, we have grown single crystals with carrier concentration ranging from 10¹⁵ to 10¹⁹ cm^-3 by varying the sulfur content, and then measured the ESR spectra due to donor electrons at 300 K; the g-shift, and linewidth broadening are discussed in terms of correlations between donor electrons, and in relation to the results of Hall measurements carried out in the 20 to 300 K range.