ABSTRACT
Single crystals of the chalcopyrite compound ZnGeP2 were grown from the nonstoichiometric melts by the gradient freezing. Physical properties of ZnGeP2 homogeneity bulk crystals and In/ZnGeP2 surface-barrier structures on them are reported. The luminescence spectra reveal a broad infrared emission with a peak position 1.25–1.44 eV at T=80 K. It was founding that these peak shifts to the short-wavelength region as the pumping level increases that exhibits features of donor-acceptor recombination. The photosensitivity of In/ZnGeP2 structures at the long-wavelength region decreased as a results of the reduced crystallization temperature.
