Bulk crystals in the system Cu-In-Ga-Se with initial Ga/Ga+In = 0.1 to 0.3. Growth from the melt and characterization

Copper Indium Gallium Selenide bulk crystals with integral compositions on the In₂Se₃-rich side of the quasi-binary section Cu₂Se-In₂Se₃ in the system Cu-In-Se, in which 10 to 30 % of the Indium were replaced by Gallium, were grown using the vertical gradient freeze method. The crystals were characterized using energy-dispersive X-ray spectroscopy, scanning electron microscopy, interference contrast microscopy and photoluminescence.