ABSTRACT
Solution techniques were employed to grow CuInSe2 and CuInS2 bulk crystals. CuInSe2 was investigated by means of Hall measurements, executed in a temperature range from 90 to 500 K. The received material was found to be p-type and electrically homogenious throughout the crystal.
For CuInS2, grown by the travelling heater method, different compositions of the supply material were used. Although no additional phases or deviation of the crystals from the stoichiometry could be observed by XRD and EDX, the electrical properties show a strong dependence on supply composition.
