Characterization of CuInTe2 Grown by the Tellurization of Cu and In in Liquid Phase.

Single crystals of CuInTe₂ were grown by a new technique that involved the tellurization of Cu and In in liquid phase. Samples obtained from the ingots grown at tellurization temperature T_t around 70% of the melting point of CuInTe₂ had their stoichiometry, relatively close to 1:1:2. Acceptor levels between 2 and 25 meV were determined from the analysis of the temperature dependence of the hole concentration. From the knowledge of molecularity and valence stoichiometry of each sample, it is established that the dominant shallow acceptor with E_A(0) ≈ 30 meV is due to V_In. The density of states effective mass of the hole is found to be (0.78±0.02)me.