ABSTRACT
The boundaries of homogeneity region (HR) of the CuGaTe2 semiconductor compound under excess and deficit of Te as well as excess of GaTe and Cu relative to the stoichiometric composition were determined. It was established that below the temperature of phase transition, CuGaTe2 is a berthollide phase with HR shifted toward Te excess relative to the stoichiometric composition. The presence of anomalies in concentration dependences of microhardness and Seebeck coefficient in the vicinity of 50.4 at.% Te is attributed to percolation effects in point defects subsystem.
