ABSTRACT
The II-IV-V2 chalcopyrite-type compound semiconductor CdSiAs2 is expected as a candidate material for optoelectronic devices such as high efficient solar cell. In order to prepare a large size crystal, plasma-activated sintering was performed in vacuum using CdSiAs2 powder source at 1073 K. The X-diffraction pattern of the disk showed the single phase and the SEM micrograph of the fracture surface indicated the well-developed sintered structure. The EPMA map showed Si precipitates distributed in the disc and the the composition of the matrix was CdSi0.5As1.5. The successful sintering performance of CuInSe2 as well as CdSiAs2 may promise the preparation of large scale bulk crystals of the semiconducting materials by this new process.
