ABSTRACT

The deposition rate and composition of the amorphous deposit, produced at room temperature by pulsed laser ablation of ferroelectric Pb(Zr0.65 Ti0.35)O3 (PZT), superconducting Bi2Sr2CuO6 (BSCO) and a semiconductor CuInSe2 (CIS), were studied experimentally with respect to ambient oxygen and/or argon pressure. The results are discussed considering the deposition process as a sorption of ablated species on the substrate surface and assuming the species retarding in a gas due to their collisions with gas molecules.