ABSTRACT
High-quality CuInSe2 thin films were grown on soda-lime glass and GaAs(001) substrates by simultaneous and alternate feeding (AF) physical vapor deposition (PVD) method. A clear free excitonic (FE) absorption peak was observed from the films as the substrate temperature increased up to 560°C, and the full width at half maximum (FWHM) of the FE absorption peak become narrower with shortening the interval of metal feeding cycle for AF-PVD. The CuInSe2 heteroepitaxial layers grown on GaAs(001) exhibited a predominant near-band-edge photoluminescence peak from 2K up to room temperature (RT). These results suggest that the precise control of a solute concentration can improve the film quality and homogeneity under the solution growth regime.
