ABSTRACT
A novel molecular beam epitaxy (MBE) method of CuGaSe2 were shown with CuI, Ga and Se sources, c-axis epitaxial growth of tetragonal “CuGaSe2” with composition ratio Cu/Ga=0.5–1.2 was obtained on GaAs(lOO) substrates at 600–750 °C. Low temperature photoluminescence (PL) spectrum consisted of exciton emission at 1.715 ± 0.002eV and a DA pair emission at 1.631 ± 0.003eV for Cu/Ga ratios higher than unity. The PL bands from films with Cu/Ga ratio lower than 0.9 were observed to move lower energies by 13meV. The effects of Cul/Ga flux ratio on the “CuGaSe2” film properties were examined.
