Metalorganic vapor phase epitaxy and characterization of very high-purity CuInSe2 layers

CuInSe₂ films have been grown by metalorganic vapor phase epitaxy (MOVPE) on GaAs and sapphire substrates. The films were characterized by X-ray diffraction (XRD), photoluminescence (PL), and optical absorption (OA) techniques. Contribution of excitonic absorptions were observed in the OA spectra at room temperature (RT). A predominant near-band-edge PL peak at RT was observed from (001) orientated epilayer grown on a GaAs(OOl) substrate. These results prove that very high quality CuInSe₂ epilayers were successfully grown by MOVPE.