CuInS2 by reactive annealing of Cu-In precursors in H2S-containing atmosphere

Rutherford Backscattering Spectrometry (RBS) and Scanning Electron Microscopy (SEM) are applied to investigate the interplay of morphology and composition in Cu-In precursor films and in sulphurized CuInS₂-layers. It is shown that the sulphurization conditions have a decisive influence on the properties of the CuInS₂ films.