Changes to the Electrical and Structural Properties of Polycrystalline Thin-Film Cu(In,Ga)Se2 Materials by the Use of Thin MF (M=Na, K, Cs) Precursor Layers

doi:10.1201/9781003063049-77

Chapter

Changes to the Electrical and Structural Properties of Polycrystalline Thin-Film Cu(In,Ga)Se2 Materials by the Use of Thin MF (M=Na, K, Cs) Precursor Layers

ABSTRACT

The growth of Cu(In,Ga)Se₂ polycrystalline thin films under the presence of selected Group la elements is presented. Some electrical, structural, and electronic properties due to the presence of such impurities are quantified. We present a model for the role of Na during Cu(In,Ga)Se₂ growth that attributes the enhancements in electrical conductivity and photovoltaic device performance to the annihilation of donor states (i.e., In_Cu) at the bulk and grain-boundary regions.