Vapor Phase Epitaxy of CuGaS2 Using CuCl, Dietylgalliumchloride and H2S Sources under Simultaneous and Alternate Feeding Conditions

Thin films of CuGaS₂ oriented toward c-axis have been grown on (100)GaP substrates using CuCl, diethylgalliumchloride and H₂S by vapor phase epitaxy under simultaneous and alternate source feeding conditions. The films grown under completely separated alternate source feeding condition suggest atomic layer epitaxial growth of the compound, though data are not conclusive. The supply of H₂S between two kinds of metal source supplies seems essential for this growth.