Features of the growth of epitaxial layers of solid solutions InAs1-x-ySbxPy lattice-matched the substrate InAs

Features of epitaxial growth from the four-component liquid phase solid solutions InAs_1–x–ySb_xP_y on the InAS substrate are described. There have been determined distribution coefficients As, Sb and P and of the impurities Zn, Mg and Te at different substrate orientations and temperature-time regimes. The results of investigation of photoelectrical properties of p-n heterojunctions on the base of solid solutions InAs_1–x–ySb_xP_y have also been presented.