Annealing in Se vapor Effect on Crystallinity of CuInSe2 Thin Films Prepared by Pulsed Laser Ablation Method

CuInSe₂ thin films were prepared on quartz substrates by pulsed laser ablation technique at various repetition frequencies using a CuInSe₂ bulk crystal target. As-deposited thin films were annealed at 400°C for 1 h in Se vapor. We examined the annealing effect for fabrication of CuInSe₂ thin films. It is found that crystallinity and chemical composition of CuInSe₂ thin films improved by annealing. CuInSe₂ thin films was constructed with column-like grains which were grown by annealing.