Studies of CuInSe2 thin films grown by multistep MOCVD from In(Se) binary phase

MOCVD growth of CuInSe₂ (CIS) thin films has been undertaken by multistep deposition. In(Se) has been used as starting layer. Optimizing the substrate temperature at 350°C permitted to obtain homogeneous In₂Se₃ thin films. Copper was then deposited at 350°C. The films are composed of In₆Se₇, Cu and Cu_2-xSe. Completion of the process was made by heat treatment under selenium pressure at 200°C and then at higher temperature to obtain stoichiometric CIS.