P-Type Doping for CuGaS2 Grown by MOVPE

We have demonstrated the epitaxial growth of a p-type CuGaS₂ layer on a GaP (001) substrate by metalorganic vapor phase epitaxy (MOVPE). The p-type control of a CuGaS₂ layer from 5xl0¹⁶ to 5xl0¹⁷ cm³ have been succeeded with a phosphine as an acceptor dopant. The phosphorus in a CuGaS, layer creates a monovalent acceptor level.