Epitaxial CuInxSey layers of improved crystal quality and determination of the crystal orientation with Raman spectroscopy

Heteroepitaxial layers of In-rich CuIn_xSe_y were grown by molecular beam epitaxy on Si substrates. The crystal quality has been characterized with x-ray diffraction (XRD) and Rutherford backscattering spectroscopy (RBS). With an optimized growth procedure CuIn_xSe_y layers with RBS ion channeling yield of-7% and XRD rocking curve values of~900 arcs were obtained. Polarized Raman scattering measurements were performed on (112) and (001) oriented epitaxial CuInSe₂ layers to check the crystallographic orientation.