ABSTRACT
Ga2-xErxS3 single crystals (type A and type B) were grown by the chemical transport reaction method. The single crystals were crystallized into the monoclinic structure. The optical energy band gaps of the single crystals were found to be 3.375 eV for the type A single crystal and 3.365 eV for the type B single crystal at 13 K. The blue emission with a peak at 441 nm was observed in the type A single crystal. Sharp emission peaks in the Ga2-xErxS3 single crystals were observed and analysed as originating from the electron transitions between the energy levels of the Er3+ ion sited in Cs symmetry.
