ABSTRACT
The information provided by a wide variety of microscopies and related spectroscopies may be combined to give a more complete understanding of the complex growth processes involved in fabricating wide-gap materials. Two examples will be illustrated. One is the growth of thick oriented diamond films by CVD on silicon substrates: the other is the growth of epitaxial layers of GaN. The microscopies that have been used are optical microscopy (including interference, Raman and photoluminescence spectroscopy), scanning electron microscopy (including electron back-scattered diffraction and cathodoluminescence) and transmission electron microscopy (including CBED, cathodoluminescence, and energy-selected imaging). Information has been deduced about the growth processes, the stresses induced and point and extended defect incorporation.
